ds(on) AON6244 60v n-channel mosfet v ds i d (at v gs =10v) 85a r ds(on) (at v gs =10v) < 4.7m w r ds(on) (at v gs =4.5v) < 6.2m w 100% uis tested 100% r g tested symbol v drain-source voltage 60 the ao6244 uses trench mosfet technology that is uniquely optimized to provide the most efficient hi gh frequency switching performance.power losses are minimized due to an extremely low combination of r and crss.in addition,switching behavior is well controlled with a soft recovery body diode.this dev ice is ideal for boost converters and synchronous rectifie rs for consumer, telecom, industrial power supplies and le d backlighting. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 60v g d s top view 1 2 3 4 8 7 6 5 v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jc parameter typ max t c =25c 2.3 33 t c =100c junction and storage temperature range -55 to 150 c thermal characteristics units maximum junction-to-ambient a c/w r q ja 14 40 17 v 20 gate-source voltage drain-source voltage 60 avalanche energy l=0.1mh c mj avalanche current c 12 v a 65 a t a =25c i dsm a t a =70c 200 pulsed drain current c continuous drain current g i d 85 59 t c =25c t c =100c power dissipation b p d continuous drain current 211 15 w power dissipation a p dsm w t a =70c 83 1.5 t a =25c maximum junction-to-case c/w c/w maximum junction-to-ambient a d 1 55 1.5 www.freescale.net.cn general description product summary 1/6
2/6 AON6244 symbol min typ max units bv dss 60 v v ds =60v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.5 2 2.5 v i d(on) 200 a 3.8 4.7 t j =125c 6.9 8.5 4.8 6.2 m w g fs 150 s v sd 0.68 1 v i s 85 a c iss 3070 3838 4610 pf c oss 290 415 540 pf c rss 4 14.5 25 pf r g 0.5 1 1.5 w q g (10v) 40 52 64 nc q g (4.5v) 16 21 30 nc q gs 13.5 nc q gd 3 nc t d(on) 11 ns t 3 ns maximum body-diode continuous current g input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time v gs =10v, v ds =30v, i d =20a gate source charge gate drain charge total gate charge i s =1a,v gs =0v v ds =5v, i d =20a v gs =4.5v, i d =20a forward transconductance diode forward voltage v =10v, v =30v, r =1.5 w , gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge m a v ds =v gs , i d =250 m a v ds =0v, v gs =20v zero gate voltage drain current gate-body leakage current m w on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a r ds(on) static drain-source on-resistance i dss reverse transfer capacitance v gs =0v, v ds =30v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage t r 3 ns t d(off) 34 ns t f 4 ns t rr 14 21.5 28 ns q rr 60 87.5 115 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. turn-on rise time body diode reverse recovery charge i f =20a, di/dt=500a/ m s turn-off delaytime v gs =10v, v ds =30v, r l =1.5 w , r gen =3 w turn-off fall time i f =20a, di/dt=500a/ m s body diode reverse recovery time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. www.freescale.net.cn
www.freescale.net.cn AON6244 typical electrical and thermal characteristics 17 5 2 10 0 18 0 20 40 60 80 100 0 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 2 3 4 5 6 0 5 10 15 20 25 30 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =20a v gs =10v i d =20a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 20 40 60 80 100 120 140 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =3v 3.5v 4.5v 6v 10v 4v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 0 2 4 6 8 10 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =20a 25 c 125 c 3/6
AON6244 typical electrical and thermal characteristics 17 5 2 10 0 18 0 2 4 6 8 10 0 10 20 30 40 50 60 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 400 800 1200 1600 2000 2400 2800 3200 3600 4000 4400 0 10 20 30 40 50 60 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to-ca se c oss c rss v ds =30v i d =20a t j(max) =150 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe 10 m s 10ms 1ms dc r ds(on) t j(max) =150 c t c =25 c 100 m s 40 (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q q q q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse operating area (note f) r q jc =1.5 c/w www.freescale.net.cn 4/6
AON6244 typical electrical and thermal characteristics 17 5 2 10 0 18 0 20 40 60 80 100 0 25 50 75 100 125 150 power dissipation (w) t case (c) figure 13: power de-rating (note f) 0 20 40 60 80 100 0 25 50 75 100 125 150 current rating i d (a) t case (c) figure 14: current de - rating (note f) 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 15: single pulse power rating junction - to - t a =25 c 1 10 100 1000 1 10 100 1000 i ar (a) peak avalanche current time in avalanche, t a ( m mm m s) figure 12: single pulse avalanche capability (note c) t a =25 c t a =150 c t a =100 c t a =125 c 40 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse figure 14: current de - rating (note f) figure 15: single pulse power rating junction - to - ambient (note h) r q ja =55 c/w www.freescale.net.cn 5/6
AON6244 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr www.freescale.net.cn 6/6
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